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SOLVED: Carrier concentration profiles in a biased pn diode; diffusion capacitance Consider a long-base Si pn junction of cross-sectional area 100 m^2 maintained at 300K, with minority-carrier lifetimes tn = 1 s
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![PDF] Short-diode like diffusion capacitance of organic light emission devices | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/af96aa63407bc71802cacab090825811ffe265f4/3-Figure4-1.png "PDF] Short-diode like diffusion capacitance of organic light emission devices | Semantic Scholar")